PART |
Description |
Maker |
IRF7832ZTR PB-IRF7832Z |
Leaded 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
IRF3709ZCSTRR PB-IRF3709ZCS IRF3709ZCSTRL |
Leaded 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
PB-IRLU8203 |
Leaded 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier
|
IRF3709ZSTRL |
Leaded 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
FDMA430NZ0609 FDMA430NZ |
Single N-Channel 2.5V Specified PowerTrench? MOSFET 30V, 5.0A, 40m?/a> Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET 30V, 5.0A, 40mз
|
FAIRCHILD[Fairchild Semiconductor]
|
IRF3709ZS IRF3709Z IRF3709ZL |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
FDMA7672 |
Single N-Channel PowerTrench? MOSFET 30 V, 9 A, 21 mΩ 30V Single N-Channel PowerTrenchMOSFET
|
Fairchild Semiconductor
|
CD9011 CD9011D CD9011E CD9011F CD9011G CD9011H CD9 |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 273 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 44 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 40 - 59 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 54 - 80 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 72 - 108 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 97 - 146 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 132 - 198 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 182 - 273 hFE
|
Continental Device India Limited
|
IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL I |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A) Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A) Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
|
IRF[International Rectifier]
|
FDS887607 FDS8876 |
N-Channel PowerTrench? MOSFET 30V, 12.5A, 8.2mΩ N-Channel PowerTrench庐 MOSFET 30V, 12.5A, 8.2m惟 N-Channel PowerTrench㈢ MOSFET 30V, 12.5A, 8.2mヘ
|
Fairchild Semiconductor
|